High Total Power Dissipation: ON Semiconductor shall have the right 9012 transistor datasheet terminate this Agreement upon written notice to Licensee if: Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. UNISONIC TECHNOLOGIES CO., LTD.Ģ of 3 QW-RB. Quality bd139 transistor datasheet pdf with free worldwide shipping on. MIN This datasheet has been downloaded from at this page. Operating Junction Temperature (Tj): 135☌Transition Frequency (ft): 50MHzCollector Capacitance (Cc): 3.5pFForward Current Transfer Ratio (hFE), MIN: 64Noise Figure, dB: -Package: TO92. (-500mA) 1Excellent hFE linearity Complementary to UTC 9013 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta25C, unless. 9012Datasheet, Equivalent, Cross Reference SearchType Designator: 9012Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.4WMaximum Collector-Base Voltage Vcb : 25VMaximum Collector-Emitter Voltage Vce : 25VMaximum Emitter-Base Voltage Veb : 3VMaximum Collector Current Ic max : 0.4AMax. 9012 Datasheet (PDF) UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES High total power dissipation.
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